| PART |
Description |
Maker |
| V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL-VITELIC
|
| V53C317405A V53C317405A50 V53C317405A60 |
4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| A420616 A420616V-50U A420616S-45 A420616S-50 A4206 |
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMICC[AMIC Technology]
|
| V53C832L35 V53C832L40 V53C832L V53C832L30 V53C832L |
High performance 3.3V 256K x 32 EDO page mode CMOS dynamic RAM
HIGH PERFORMANCE 3.3 VOLT 256K X 32 EDO PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
|
| V53C518165A V53C518165A50 V53C518165A60 |
1M x 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
|
MOSEL[Mosel Vitelic, Corp]
|
| V53C518165A V53C518165A50 V53C518165A60 |
1M x 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
|
Mosel Vitelic Corp
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| IBM11N4735BB-70 IBM11N4645BB-60 |
x72 EDO Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
American Power Management, Inc.
|
| IS41LV16100B-50T-TR IS41LV16100B-60T-TR IS41LV1610 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
|
| AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO)
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation
Integrated Silicon Solution, Inc.
Lattice Semiconductor, Corp.
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
